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1 of 11 103002 features 10 years minimum data retention in the absence of external power data is automatically protected during power loss replaces 512k x 8 volatile static ram, eeprom or flash memory unlimited write cycles low-power cmos read and write access times as fast as 70 ns lithium energy source is electrically disconnected to retain freshness until power is applied for the first time full 10% v cc operating range (DS1250Y) optional 5% v cc operating range (ds1250ab) optional industrial temperature range of -40 c to +85 c, designated ind jedec standard 32-pin dip package powercap module (pcm) package - directly surface-mountable module - replaceable snap-on powercap provides lithium backup battery - standardized pinout for all nonvolatile sram products - detachment feature on pcm allows easy removal using a regular screwdriver pin assignment pin description a0 - a18 - address inputs dq0 - dq7 - data in/data out ce - chip enable we - write enable oe - output enable v cc - power (+5v) gnd - ground nc - no connect DS1250Y/ab 4096k nonvolatile sram www.maxim-ic.com 13 1 2 3 4 5 6 7 8 9 10 11 12 14 31 32-pin encapsulated package 740-mil extended a14 a7 a5 a4 a3 a2 a1 a0 dq1 dq0 v cc a 15 a 17 we a 13 a 8 a 9 a 11 oe a 10 ce dq7 dq5 dq6 32 30 29 28 27 26 25 24 23 22 21 19 20 a16 a12 a6 a18 dq2 gnd 15 16 18 17 dq4 dq3 1 nc 2 3 a15 a16 nc v cc we oe ce dq7 dq6 dq5 dq4 dq3 dq2 dq1 dq0 gnd 4 5 6 7 8 9 10 11 12 13 14 15 16 17 a 17 a 14 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 a 13 a 12 a 11 a 10 a 9 a 8 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 34 a 18 gnd v bat 34-pin powercap module (pcm) (uses ds9034pc powercap)
DS1250Y/ab 2 of 11 description the ds1250 4096k nonvolatile srams are 4,194,304-bit, fu lly static, nonvolatile srams organized as 524,288 words by 8 bits. each complete nv sram ha s a self-contained lithium energy source and control circuitry which constantly monitors v cc for an out-of-tolerance condition. when such a condition occurs, the lithium energy source is automatically switched on and write prot ection is unconditionally enabled to prevent data corruption. dip-package ds 1250 devices can be used in place of existing 512k x 8 static rams directly c onforming to the popular byte-wide 32-pin dip standard. ds1250 devices in the powercap module package are dir ectly surface mountable and are normally paired with a ds9034pc powercap to form a complete nonvolatile sram module. there is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing. read mode the ds1250 executes a read cycle whenever we (write enable) is inactive (high) and ce (chip enable) and oe (output enable) are active (l ow). the unique address specified by the 19 address inputs (a 0 - a 18 ) defines which of the 524,288 bytes of data is to be accessed. valid da ta will be available to the eight data output drivers within t acc (access time) after the last address input signal is stable, providing that ce and oe (output enable) access times are also satisfied. if oe and ce access times are not satisfied, then data access must be measured from the later-occurring signal ( ce or oe ) and the limiting parameter is either t co for ce or t oe for oe rather than address access. write mode the ds1250 executes a write cycle whenever the we and ce signals are active (low) after address inputs are stable. the later-occurring falling edge of ce or we will determine the start of the write cycle. the write cycle is terminated by the earlier rising edge of ce or we . all address input s must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycle can be initiated. the oe control signal should be kept inactive (high) during write cycles to avoid bus contention. however, if the output drivers are enabled ( ce and oe active) then we will disable the outputs in t odw from its falling edge. data retention mode the ds1250ab provides full functional capability for v cc greater than 4.75 volts and write protects by 4.5 volts. the DS1250Y provides fu ll functional capability for v cc greater than 4.5 volts and write protects by 4.25 volts. data is maintained in the absence of v cc without any additional support circuitry. the nonvolatile static rams constantly monitor v cc . should the supply voltage decay, the nv srams automatically write protect themselves, all inputs become ?don?t care,? and all outputs become high- impedance. as v cc falls below approximately 3.0 volts, a pow er switching circuit connects the lithium energy source to ram to retain data. during power-up, when v cc rises above appr oximately 3.0 volts, the power switching circuit connects external v cc to ram and disconnects the lithium energy source. normal ram operation can resume after v cc exceeds 4.75 volts for the ds1250ab and 4.5 volts for the DS1250Y. freshness seal each ds1250 device is shipped from dallas semiconduc tor with its lithium energy source disconnected, guaranteeing full energy capacity. when v cc is first applied at a level greater than 4.25 volts, the lithium energy source is enabled for battery back-up operation.
DS1250Y/ab 3 of 11 packages the ds1250 is available in two packages: 32-pin di p and 34-pin powercap module (pcm). the 32-pin dip integrates a lithium battery, an sram memory and a nonvolatile control function into a single package with a jedec-standard 600-mil dip pinout . the 34-pin powercap module integrates sram memory and nonvolatile control into a module base along with contacts for connection to the lithium battery in the ds9034pc powercap. the powercap module package design allows a ds1250 pcm device to be surface mounted w ithout subjecting its lithium backup battery to destructive high- temperature reflow soldering. after a ds1250 pc m module base is reflow soldered, a ds9034pc powercap is snapped on top of the pcm to form a complete nonvolatile sram module. the ds9034pc is keyed to prevent improper attachment. ds1250 module bases and ds9034pc powercaps are ordered separately and shipped in separa te containers. see the ds9034pc data sheet for further information. absolute maximum ratings* voltage on any pin relativ e to ground -0.3v to +7.0v operating temperature 0c to 70c, -40c to +85c for ind parts storage temperature -40c to +70c, -40c to +85c for ind parts soldering temperature 260c for 10 seconds * this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods of time may affect reliability. recommended dc operating conditions (t a : see note 10) parameter symbol min typ max units notes ds1250ab power supply voltage v cc 4.75 5.0 5.25 v DS1250Y power supply voltage v cc 4.5 5.0 5.5 v logic 1 v ih 2.2 v cc v logic 0 v il 0.0 +0.8 v dc electrical (v cc =5v 5% for ds1250ab) characteristics (t a : see note 10) (v cc =5v 10% for DS1250Y) parameter symbol min typ max units notes input leakage current i il -1.0 +1.0 a i/o leakage current ce v ih v cc i io -1.0 +1.0 a output current @ 2.4v i oh -1.0 ma output current @ 0.4v i ol 2.0 ma standby current ce =2.2v i ccs1 200 600 a standby current ce =v cc -0.5v i ccs2 50 150 a operating current i cco1 85 ma write protection voltage (ds1250ab) v tp 4.50 4.62 4.75 v write protection voltage (DS1250Y) v tp 4.25 4.37 4.5 v
DS1250Y/ab 4 of 11 capacitance ( t a =25 c) parameter symbol min typ max units notes input capacitance c in 510pf input/output capacitance c i/o 510pf ac electrical (v cc =5v 5% for ds1250ab) characteristics (t a : see note 10) (v cc =5v 10% for DS1250Y) ds1250ab-70 DS1250Y-70 ds1250ab-100 DS1250Y-100 parameter symbol min max min max units notes read cycle time t rc 70 100 ns access time t acc 70 100 ns oe to output valid t oe 35 50 ns ce to output valid t co 70 100 ns oe or ce to output active t coe 5 5 ns 5 output high z from deselection t od 25 35 ns 5 output hold from address change t oh 55 ns write cycle time t wc 70 100 ns write pulse width t wp 55 75 ns 3 address setup time t aw 00 ns write recovery time t wr1 t wr2 5 15 5 15 ns ns 12 13 output high z from we t odw 25 35 ns 5 output active from we t oew 5 5 ns 5 data setup time t ds 30 40 ns 4 data hold time t dh1 t dh2 0 10 0 10 ns ns 12 13
DS1250Y/ab 5 of 11 read cycle see note 1 write cycle 1 see notes 2, 3, 4, 6, 7, 8, and 12
DS1250Y/ab 6 of 11 write cycle 2 see notes 2, 3, 4, 6, 7, 8, and 13 power-down/power-up condition see note 11
DS1250Y/ab 7 of 11 power-down/power-up timing (t a : see note 10) parameter symbol min typ max units notes v cc fail detect to ce and we inactive t pd 1.5 s 11 v cc slew from v tp to 0v t f 150 s v cc slew from 0v to v tp t r 150 s v cc valid to ce and we inactive t pu 2ms v cc valid to end of write protection t rec 125 ms (t a =25 c) parameter symbol min typ max units notes expected data retention time t dr 10 years 9 warning: under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode. notes: 1. we is high for a read cycle. 2. oe = v ih or v il . if oe = v ih during write cycle, the output buffers remain in a high-impedance state. 3. t wp is specified as the logical and of ce and we . t wp is measured from the latter of ce or we going low to the earlier of ce or we going high. 4. t dh , t ds are measured from the earlier of ce or we going high. 5. these parameters are sampled with a 5 pf load and are not 100% tested. 6. if the ce low transition occurs simultaneously with or latter than the we low transition, the output buffers remain in a high-impedance state during this period. 7. if the ce high transition occurs prior to or simultaneously with the we high transition, the output buffers remain in high-imped ance state during this period. 8. if we is low or the we low transition occurs prior to or simultaneously with the ce low transition, the output buffers remain in a high -impedance state during this period. 9. each ds1250 has a built-in switch that disconnects the lithium source until v cc is first applied by the user. the expected t dr is defined as accumulative time in the absence of v cc starting from the time power is first applied by the user. 10. all ac and dc electrical characteristics are valid over the full operating temperature range. for commercial products, this range is 0 c to 70 c. for industrial products (ind), this range is -40 c to +85 c. 11. in a power-down condition the voltage on any pin may not exceed the voltage on v cc . 12. t wr1 and t dh1 are measured from we going high. 13. t wr2 and t dh2 are measured from ce going high. 14. ds1250 modules are recognized by underwriters laboratory (u.l. ) under file e99151.
DS1250Y/ab 8 of 11 dc test conditions ac test conditions outputs open output load: 100 pf + 1ttl gate cycle = 200 ns for operating current input pulse levels: 0 - 3.0v all voltages are referenced to ground timing measurement reference levels input: 1.5v output: 1.5v input pulse rise and fall times: 5 ns ordering information ds1250 ttp - sss - iii operating temperature range blank: 0 to 70 ind: -40 to +85 c access speed 70: 70 ns 100: 100 ns package type blank: 32-pin 600 mil dip p: 34-pin powercap module device type ab: 5% y: 10% DS1250Y/ab nonvolatile sram, 32-pin, 740 mil-extended dip module pkg 32-pin dim min max a in. mm 1.680 42.67 1.700 43.18 b in. mm 0.720 18.29 0.740 18.80 c in. mm 0.355 9.02 0.375 9.52 d in. mm 0.080 2.03 0.110 2.79 e in. mm 0.015 0.38 0.025 0.63 f in. mm 0.120 3.05 0.160 4.06 g in. mm 0.090 2.29 0.110 2.79 h in. mm 0.590 14.99 0.630 16.00 j in. mm 0.008 0.20 0.012 0.30 k in. mm 0.015 0.38 0.021 0.53
DS1250Y/ab 9 of 11 DS1250Y/ab nonvolatile sram, 34-pin powercap module inches pkg dim min nom max a 0.920 0.925 0.930 b 0.980 0.985 0.990 c - - 0.080 d 0.052 0.055 0.058 e 0.048 0.050 0.052 f 0.015 0.020 0.025 g 0.020 0.025 0.030
DS1250Y/ab 10 of 11 DS1250Y/ab nonvolatile sram, 34-pin powercap module with powercap inches pkg dim min nom max a 0.920 0.925 0.930 b 0.955 0.960 0.965 c 0.240 0.245 0.250 d 0.052 0.055 0.058 e 0.048 0.050 0.052 f 0.015 0.020 0.025 g 0.020 0.025 0.030 assembly and use reflow soldering dallas semiconductor recommends that powercap module bases experience one pass through solder reflow oriented labe l-side up (live-bug). hand soldering and touch-up do not touch soldering iron to leads for more than 3 seconds. to solder, apply flux to the pad, heat the lead frame pad and apply solder. to remove part, apply flux, heat pad until solder reflows, and use a solder wick. lpm replacement in a socket to replace a low profile module in a 68-pin plcc socket, attach a ds9034pc powercap to a module base then insert the complete module into the so cket one row of leads at a time, pushing only on the corners of the cap. never apply force to the center of the device. to remove from a socket, use a plcc extraction tool and ensure that it does not hit or da mage any of the module ic components. do not use any other tool for extraction.
DS1250Y/ab 11 of 11 recommended powercap module land pattern inches pkg dim min nom max a - 1.050 - b - 0.826 - c - 0.050 - d - 0.030 - e - 0.112 - recommended powercap module solder stencil inches pkg dim min nom max a - 1.050 - b - 0.890 - c - 0.050 - d - 0.030 - e - 0.080 -

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